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Data Sheet No.PD60221
IRS2011SPBF
HIGH AND LOW SIDE DRIVER
Features
* Floating channel designed for bootstrap operation Fully operational up to +200V Tolerant to negative transient voltage, dV/dt immune * Gate drive supply range from 10V to 20V * Independent low and high side channels * Input logic HIN/LIN active high * Undervoltage lockout for both channels * 3.3V and 5V input logic compatible * CMOS Schmitt-triggered inputs with pull-down * Matched propagation delay for both channels
Product Summary
VOFFSET IO+/VOUT ton/off Delay Matching 200V max. 1.0A /1.0A typ. 10 - 20V 60 ns typ. 20 ns max.
Applications
* Audio Class D amplifiers * High power DC-DC SMPS converters * Other high frequency applications
Packages
Description
The IRS2011 is a high power, high speed power MOSFET driver with independent high and low side referenced output channels, ideal for Audio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS 8-Lead SOIC or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
Typical Connection
200V
HIN LIN COM
5
HIN LIN COM
VS HO VB VCC
4
TO LOAD
8
LO
1
VCC
(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
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IRS2011SPBF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol
VB VS V HO V CC VLO V IN dV s/dt PD RTHJA TJ TS TL
Definition
High side floating supply voltage High side floating supply offset voltage High side floating output voltage Low side fixed supply voltage Low side output voltage Logic input voltage (HIN & LIN) Allowable offset supply voltage transient (figure 2) Package power dissipation @ TA = +25C Thermal resistance, junction to ambient Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) (8-lead DIP) (8-lead SOIC) (8-lead DIP) (8-lead SOIC)
Min.
-0.3 VB - 20 VS - 0.3 -0.3 -0.3 -0.3 -- -- -- -- -- -- -55 --
Max.
220 VB + 0.3 VB + 0.3 20 VCC +0.3 VCC +0.3 50 1.0 0.625 125 200 150 150 300
Units
V
V/ns W C/W
C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. The VS and COM offset ratings are tested with all supplies biased at 15V differential.
Symbol
VB VS V HO V CC VLO V IN TA
Definition
High side floating supply absolute voltage High side floating supply offset voltage High side floating output voltage Low side fixed supply voltage Low side output voltage Logic input voltage (HIN & LIN) Ambient temperature
Min.
VS + 10 Note 1 VS 10 0 COM -40
Max.
VS + 20 200 VB 20 VCC 5.5 125
Units
V
C
Note 1: Logic operational for VS of -8V to +200V. Logic state held for VS of -8V to -VBS.
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IRS2011SPBF
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V, CL = 1000 pF, TA = 25C unless otherwise specified. Figure 1 shows the timing definitions.
Symbol
ton t off tr tf DM1 DM2
Definition
Turn-on propagation delay Turn-off propagation delay Turn-on rise time Turn-off fall time Turn-on delay matching | ton (H) - ton (L) | Turn-off delay matching | toff (H) - toff (L) |
Min. Typ. Max. Units Test Conditions
-- -- -- -- -- -- 60 60 25 15 -- -- 80 80 40 35 20 20 VS = 0V VS = 200V
ns
Static Electrical Characteristics
VBIAS (VCC, VBS) = 15V, and TA = 25C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM and are applicable to all logic input leads: HIN and LIN. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol
V IH V IL V OH VOL ILK IQBS IQCC IIN+ IINVBSUV+ VBSUVVCCUV+ VCCUVIO+ IO-
Definition
Logic "1" input voltage Logic "0" input voltage High level output voltage, VBIAS - VO Low level output voltage, VO Offset supply leakage current Quiescent VBS supply current Quiescent VCC supply current Logic "1" input bias current Logic "0" input bias current VBS supply undervoltage positive going threshold VBS supply undervoltage negative going threshold VCC supply undervoltage positive going threshold VCC supply undervoltage negative going threshold Output high short circuit pulsed current Output low short circuit pulsed current
Min. Typ. Max. Units Test Conditions
2.5 -- -- -- -- -- -- -- -- 8.3 7.5 8.3 7.5 -- -- -- -- -- -- -- 120 200 3 -- 9.0 8.2 9.0 8.2 1.0 1.0 -- 1.2 1.2 0.1 50 210 300 10 1.0 9.7 8.9 V 9.7 8.9 -- -- A VO = 0V, PW = 10 s VO = 15V, PW = 10 s A VB=VS = 200V VIN = 0V or 3.3V VIN = 0V or 3.3V VIN = 3.3V VIN = 0V V IO = 0A VCC = 10V - 20V
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IRS2011SPBF
Functional Block Diagram
VB HIGH VOLTAGE LEVEL SHIFT CIRCUIT UV DETECT UV Q S R VS
3V S-TRIGGER HIN LOW VOLTAGE LEVEL SHIFT BUFFER
HO
VCC 3V S-TRIGGER LIN LOW VOLTAGE LEVEL SHIFT UV DETECT LO DELAY COM
Lead Definitions
Symbol Description
HIN LIN VB HO VS VCC LO COM Logic input for high side gate driver output (HO), in phase Logic input for low side gate driver output (LO), in phase High side floating supply High side gate drive output High side floating supply return Low side supply Low side gate drive output Low side return
Lead Assignments
5 HIN 6 LIN 7 COM 8 LO
VS 4 HO 3 VB 2 VCC 1
8-Lead SOIC
IRS2011SPBF
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IRS2011SPBF
50%
50%
HIN / LIN
trise 90% ton(H) 10% 90% toff(H) 10% tfall
HO
DM1 90% ton(L) 10% toff(L)
DM2
LO
Figure 1. Timing Diagram
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IRS2011SPBF
200 Turn-on Delay Time (ns) Turn-on Delay Time (ns) 160 120 80 40
Typ.
200 160 120
M ax.
80 40 0
Typ.
M ax.
0 -50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC) Figure 2A. Turn-On Time vs. Temperature
V BIAS Supply Voltage (V) Figure 2B. Turn-On Time vs. Supply Voltage
200 Turn-Off Time (ns) Turn-Off Time (ns) 160 120 80 40
Typ. M ax.
200 160 120
M ax.
80 40 0
Typ.
0 -50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC) Figure 3A. Turn-Off Time vs. Temperature
V BIAS Supply Voltage (V) Figure 3B. Turn-Off Time vs. Supply Voltage
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IRS2011SPBF
60 50 40 30 20 10 -50
M ax.
60 Turn-On Rise Time (ns 50
M ax.
Turn-On Rise Time (ns
40 30 20 10
Typ.
Typ.
-25
0
25
50
o
75
100
125
10
12
14
16
18
20
Temperature ( C) Fiure 4A. Turn-On Rise Time vs.Temperature
VBIAS Supply Voltage (V) Figure 4B. Turn-On Rise Time vs. Supply Voltage
50 Turn-Off Fall Time 40 30 20 10
Typ.
50 Turn-Off Fall Time 40 30 20 10 0 -25 0 25 50
o Typ.
M ax.
M ax.
0 -50
75
100
125
10
12
14
16
18
20
Temperature ( C) Figure 5A. Turn-Off Fall Time vs. Temperature
V BIAS Supply Voltage (V) Figure 5B. Turn-Off Fall Time vs. Supply Voltage
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5 4 Input Voltage (V) 3 2 1 0 -50
5 4 3 2 1 0 -25 0 25 50
o
Mi n.
Input Voltage (V) 75 100 125
Mi n.
10
12
14
16
18
20
Temperature ( C) Figure 6A. Logic "1" Input Voltage vs. Temperature
V CC Supply Voltage (V) Figure 6B. Logic "1" Input Voltage vs. Supply Voltage
5 4 3 2
M ax.
5 4 Input Voltage (V) 3 2
M ax.
Input Voltage (V)
1 0 -50
1 0
-25
0
25
50
o
75
100
125
10
12
14
16
18
20
Temperatre ( C) Figure 7A. Logic "0" Input Voltage vs. Temperature
V CC Supply Voltage (V) Figure 7B. Logic "0" Input Voltage vs. Supply Voltage
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IRS2011SPBF
High Level Output Voltage (V)
1.6 1.2
M ax.
High Level Output Voltage (V)
2.0
2 1.6 1.2
M ax.
0.8 0.4 0.0 -50
0.8 0.4 0 10 12 14 16 18 20 V CC Supply Voltage (V) Figure 8B. High Level Output vs. Supply Voltage
-25
0
25
50
o
75
100
125
Temperature ( C) Figure 8A. High Level Output vs. Temperature
Low Level Output Voltage (V)
0.16 0.12 0.08 0.04 0.00 -50
M ax.
Low Level Output Voltage (V)
0.20
0.20 0.16 0.12 0.08 0.04 0.00 10 12 14 16 18 20 V CC Supply Voltage (V) Figure 9B. Low Level Output vs. Supply Voltage
M ax.
-25
0
25
50
75
100
125
Temperature (oC) Figure 9A. Low Level Output vs.Temperature
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IRS2011SPBF
Offset Supply Leakage Current (A)
Offset Supply Leakage Current (A)
300 240 180 120 60
M ax.
140 110 80
M ax.
50 20 -10 50 80 110 140 170 200 V B Boost Voltage (V) Figure 10A. Offset Supply Leakage Current vs. Temperature
Typ.
0 -50
-25
0
25
50
75
100
125
Temperature (oC) Figure 10A. Offset Supply Leakage Current vs. Temperature
400 V BS Supply Current () 320 240
M ax.
400 V BS Supply Current () 320 240 160 80 0 -25 0 25 50 75 100 125 10 12 14 16 18 20 V BS Supply Voltage (V) Figure 11B. V BS Supply Current vs. Supply Voltage
M ax.
160
Typ.
Typ.
80 0 -50
Temperature (oC) Figure 11A. V BS Supply Current vs. Temperature
10
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IRS2011SPBF
600 V cc Supply Current (A) 480 360
M ax.
600 V CC Supply Current () 480 360 240 120
Typ. M ax.
240 120 0 -50
Typ.
0 -25 0 25 50
o
75
100
125
10
12
14
16
18
20
Temperature ( C) Figure 12A. V CC Supply Current vs. Temperature
V CC Supply Voltage (V) Figure 12B. V CC Supply Current vs. Supply Voltage
30 Logic "1" Input Current ( ) 24 18 12
M ax.
30 Logic "1" Input Current ( ) 24 18 12 6 0 -25 0 25 50
o M ax.
6 0 -50
Typ.
Typ.
75
100
125
10
12
14
16
18
20
Temperature ( C) Figure 13A. Logic "1" Input Current vs. Temperature
V CC Supply Voltage (V) Figure 13B. Logic "1" Input Current vs. Supply Voltage
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IRS2011SPBF
Logic "0" Input Current ( )
4 3 2 1
M ax.
Logic "0" Input Current ( ) -25 0 25 50
o
5
5 4 3 2
M ax.
1 0 10 12 14 16 18 20 V CC Supply Voltage (V) Figure 14B. Logic "0" Input Current vs. Supply Voltage
0 -50
75
100
125
Temperature ( C) Figure 14A. Logic "0" Input Current vs. Temperature
12 V CC Supply Current () 11
M ax.
12 V CC Supply Current () 11 10
M ax.
10
Typ.
8
Mi n.
8
Typ.
7 6 -50
7 6 -50
Mi n.
-25
0
25
50
75
100
125
-25
0
25
50
75
100
125
Temperature (oC) Figure 15. V CC Undervoltage Threshold (+) vs. Temperature
Temperature (oC) Figure 16. V CC Undervoltage Threshold (-) vs. Temperature
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IRS2011SPBF
12 V BS Supply Current () 11
M ax.
12 V BS Supply Current () 11 10
M ax.
10 8
Typ.
8
Typ.
Mi n.
7 6 -50
7 6 -50
Mi n.
-25
0
25
50
o
75
100
125
-25
0
25
50
o
75
100
125
Temperature ( C) Figure 17. V BS Undervoltage Threshold (+) vs. Temperature
Temperature ( C) Figure 18. V BS Undervoltage Threshold (-) vs. Temperature
Output Source Current ( )
3.0 Output Sink Current ( ) 2.4 1.8 1.2
Typ.
2.6 2.0 1.4 0.8 0.2 -0.4 -1.0 10 12 14 16 18 20 10 12 14 16 18 20 V BIAS Supply Voltage (V) Figure 19. Output Source Current vs. Supply Voltage V BIAS Supply Voltage (V) Figure 20. Output Sink Current vs. Supply Voltage
Typ.
0.6 0.0
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IRS2011SPBF
vs Offset Supply Voltage (V)
-3 -6
Typ.
-9 -12 -15 -18 10 12 14 16 18 20 V BS Floting Supply Voltage (V) Figure 21. Maxim um VS Negative Offset vs. Supply Voltage
65
o Temperature ( C)
65
o Temperature ( C)
55 45 35 25 15 1 10 100 1000 Frequency (KHZ) Figure 22. IRS2011s vs. Frequency (IRFBC20) Rgate=33 , V CC=12V
1 40V 70V 0V
55 45 35 25 15 1 10 100 1000 Frequency (KHZ) Figure 23. IRS2011s vs. Frequency (IRFBC30) Rgate=22 , V CC=12V
1 40v 70v 0v
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IRS2011SPBF
65
o Temperature ( C)
65 55 45 35 25 15 1 10 100 1000 1 10 100 1000 Frequency (KHZ) Frequency (KHZ) Figure 25. IRS2011s vs. Frequency (IRFB23N15D) Rgate=10 , V CC=12V
1 40V 70V 0V
45 35 25 15
1 40V 70V 0V
Figure 24. IRS2011s vs. Frequency (IRFBC40) Rgate=15 , V CC=12V
65
o Temperature ( C)
55 45 35 25 15 1 10 100
o Temperature (C)
55
1 00V 50V 0V
1000
Frequency (KHZ) Figure 26. IRS2011s vs. Frequency (IRFB4212) Rgate=10 , V CC=12V
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IRS2011SPBF
Case outlines
D A 5 B
FOOTPRINT 8X 0.72 [.028]
DIM A b c D
INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574
MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
8
7
6
5 H 0.25 [.010] A
E
6.46 [.255]
1
2
3
4
e e1 H K L
8X 1.78 [.070]
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e e1
3X 1.27 [.050]
y
A C 0.10 [.004] y
K x 45
8X b 0.25 [.010]
A1 CAB
8X L 7
8X c
NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE C ONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.
8-Lead SOIC
01-6027 01-0021 11 (MS-012AA)
WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice 7/14/2005
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